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Two Presentations at IEDM 2016

At this years Internation Electron Devices Meeting (IEDM) in San Francisco (Dec 3-7, 2016), Namlab will co-author two presentations in the 'Charged Based Memory Session'.

Tuesday, December 6, 11:10 AM

How to Make DRAM non-volatile? Anti-ferroelectrics: A New Paradigm for Universal Memories,

M. Pesic, S. Knebel, M. Hoffmann, C. Richter, T. Mikolajick and U. Schroeder, NaMLab gGmbH

We propose a simple way how non-volatility can be achieved in state-of-the-art ZrO2 based DRAM stacks. By employing electrodes with different workfunction values, a built-in bias is introduced within the dielectric stack to modify the anti-ferroelectric property of ZrO2 from standard volatile to non-volatile behavior with high endurance strength.

A paper describing the basic concept was published as a Adv. Funct. Material paper DOI: 10.1002/adfm.201603182


Positive feedback on the talk by FORBES

'Ferro-electric devices were discussed in a few papers. A interesting papers from researchers in Germany discussed how common materials used in manufacturing DRAM today could be used to create a non-volatile DRAM. It turns out that a ZrO2 layer commonly used is an anti-ferroelectric. By changing the internal bias in the DRAM two stable non-volatile states can be created in the anti-ferroelectric layer. These states can be used to make a non-volatile version of DRAM. This would be a very interesting angle on a very mature process, and if it could be scaled successfully, would give some of the emerging memories a run for their money.'



Tuesday, December 6, 10:45 AM
A 28nm HKMG Super Low Power Embedded NVM Technology Based on Ferroelectric FETs,

M. Trentzsch, S. Flachowsky, R. Richter, J. Paul, B. Reimer, D. Utess, S. Jansen, H. Mulaosmanovic*, S. Müller*, S. Slesazeck*, J. Ocker*, M. Noack*, J. Müller**, P. Polakowski**, J. Schreiter***, S. Beyer, T. Mikolajick^ and B. Rice, GLOBALFOUNDRIES Fab1, * NaMLab gGmbH, ** Fraunhofer IPMS, *** Racyics GmbH, ^ TU Dresden

A ferroelectric field effect transistor (FeFET) based eNVM was successfully implemented into a 28nm HKMG 28SLP CMOS platform. The electrical baseline properties remain the same for the FeFET integration and the JTAG-controlled 64 kbit memory shows clearly separated states. High temperature retention is demonstrated and endurance up to 100.000 cycles was achieved.

see also IEDM website:

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