Public Funded Projects
KaSiLi
In-situ Raman investigations on protective anodic layers of silicon- and lithium-based anode materials (in cooperation with 3 German partners, finished)
Nitrides 4-6G
Nitride-based dispersion-lean and efficient millimeter wave devices for future radiation-hard satellite communication technology (in cooperation with 6 German partners)
KI-IoT
Holistische Open-Source-platform for embedded system-on-chip (in cooperation with 6 German partners)
CirroStrato
Novel reconfigurable transistors for know-how protection of electronic components (in cooperation with 4 German partners)
GaNESIS
AIN/GaN epitaxy on silicon using reactive plus magnetron sputtering (in cooperation with 6 German partners)
Falcon
Flash lamp based activation of passivating contacts for highly efficient solar cells (in cooperation with 1 German partner, finished)
EcselAll2GaN
Affordable smart GaN IC solutions as enabler of greener applications (in cooperation with 10 European partners)
EcselUltimateGaN
Research for GaN technologies, devices, packages and applications to address the challenges of the future GaN roadmap (in cooperation with 26 partners from 9 countries, started May 2019) www.ultimategan.eu
Memriness
Memristive Neurons and Synapses for Neuromorphic Edge Computing, finished)
Crossbrain
Distributed and federated cross-modality actuation through advanced nanomaterials an neumorphic learning (in cooperation with 7 partners from 4 countries)
FvllMonti
Ferroelectric Vertical Low energy Low latency low volume Modules fOr Neural network Transformers In 3D (in cooperation with 5 European partners)
BeNewFerroSynaptic
BEOL technology platform based on ferroelectric synaptic devices for advanced neuromorphic processors (in cooperation with 13 partners from 5 european countries) https://www.beferrosynaptic.eu
3eFerro
Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr) O2 (in cooperation with 8 partners from 5 countries, finished)
Sensoteric
Smart Sensor Analog Front-End powered by Emerging Reconfigurable Devices (in cooperation with 6 partners from 4 countries)
FIXIT
Scaled FerroelectrIc X-bars for AI-driven sensors and actuaTors (in cooperation with 7 partners from 4 countries)
Ferro4Edge Al
Scalabale, ferroelectric based accelerators for energy efficient edge AI (in cooperation with 6 partners from 5 countries)
FreiGaN
Development of free-standing GaN wafers with improved homogeneous properties (in cooperation with 1 German partner, finished)
GaNHOCH – VTF
Equipment GaN on GaN high voltage and high frequency transistors development (finished)
F-GaN
Development of a reliable and robust foundry process technology for GaN devices based on 200 mm epitaxial GaN on silicon wafers (in cooperation with 1 German partner, finished)
EFFSIL300
Efficient and safe power transistors based on 300 mm wafers (in cooperation with 6 German partners, finished)
D3PO
Dopant and Defect Physics for Device Opitimization for Hafnium Oxide based Devices (in cooperation with 1 German and 1 French partner)
PARFAIT II
Power-aware AmbipolaR Fpga ArchITecture II (in cooperation with 2 German partners)
FeDiBiS
Polarization Switching Kinetics in Ferroelectric/Dielectric Bi-Layer Structures (in cooperation with one German partner)
Homer
Ferroelectric Hafnium Oxide Material Enhanced Reliability (in cooperation with one Russian partner)
MADSINano
Modulation-Acceptor Doping of SiO2 as Novel Doping Method for Silicon Nanowires (in cooperation with one German partner)
SecuReFET
Secure circuits through inherent reconfigurable FET (in cooperation with 1 German partner)
SOGraphMEM
SOGraphMEM; Spin Orbit functionalized GRAPHene for resistive-magnetic MEMories (in cooperation with 6 European partners)
Zeppelin
Ferroelectric zirconium oxide for piezo- and pyroelectric devices (in cooperation with 2 German partners)
BioMCross
Bio inspired Memcomputing via Crossbar Structures (in cooperation with 2 German partners)
ReLoFeMris
Reconfigurable logic and multi-bit in-memory processing with ferroelectric memristors (in cooperation with one German partner)
WUMM
Wurtzite Solid Solutions as a New Material Class for Ferroelectric Microelectronics (in cooperation with 1 German partner)
HiMGaN
Exploration of novel electrical and electro-optical device concepts and fundamental physical effects in high-quality wide-band-gap semiconductor hetero structures (in cooperation with 1 Russian partner, finished)
TemCrysT
GaN templates and manufactured GaN crystals and GaN wafers produced for the development of vertical GaN transistors
Leistungsschalter
Power transistors as a switch set (in cooperation with 2 German partners)
EUPro Net
Ferrroelectric Tunneling Junctions (FTJ) for application as analog memory devices (Passive-X-Bar- finished)
LiTRa
Development of an insitu Raman measuring station for the determination of temperature-dependent degradation mechanisms in Li-based batteries (finished)