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News 2019

Book on ferroelectric HfO2 published

The first comprehensive book on ferroelectric HfO2 is now available including significant contributions from NaMLab.

Ferroelectricity in Doped Hafnium Oxide covers all aspects related to the structural and electrical properties of semiconductor devices, and the implementation of ferroelectric HfO2- and ZrO2-based thin films into these devices, including a comparison to standard ferroelectric materials. Ferroelectric and field-induced ferroelectric properties are considered promising for various applications, including non-volatile memories, ferroelectric field-effect-transistors, energy storage and harvesting, and solid-state cooling.

The book can be ordered through the following link (including preview Google books/Science Direct):

https://www.elsevier.com/books/ferroelectricity-in-doped-hafnium-oxide/schroeder/978-0-08-102430-0

DGKK 2019

The Chair for Nanoelectronic Materials and the NaMLab gGmbH are pleased to host the 2019 DGKK workshop on epitaxy of III-V compounds on Dec 5th and 6th, 2019 in the Penck Hotel, Dresden.

We would like to continue the past successful meetings (Paderborn 2018, Freiburg 2017 and Duisburg 2016).

This workshop is aimed at researchers to exchange their latest experiences and results regarding the epitaxy of III-V compounds (see Scope/Topics).

We cordially invite everyone to the 2019 workshop to share their newest scientific results, technical innovations or specific problems/solutions concerning the growth and characterization of III-V compounds with colleagues in the community.

You can find further information, e.g. regarding venue/time of the workshop, registration, abstract submission, industry exhibition and sponsorship opportunities on this web page.

High-k Workshop 2019

NaMLab invited to the Novel High-k Application Workshop on June 11th and 12th, 2019. New challenges offered by the application of high-k dielectric materials in micro– and nanoelectronics were discussed by more than 100 participants from industry, research institutes and universities. Thank you for coming to Dresden.

In this series of annual workshops NaMLab has created a stimulating platform for application-oriented scientists to exchange ideas and discuss latest experimental results on MIM-capacitors, process technology, leakage & reliability as well as characterization of high-k dielectrics integrated in silicon based micro– and nanoelectronics. The ferroelectric properties of doped HfO2 and ZrO2 were discovered more than 10 years ago. On the second day of the workshop, root causes for the formation of this so far unknown phase will be discussed together with the application of these films.

When: Jun 11, 2019 08:00 AM to Jun 12, 2019 06:00 PM

Where: MPI PKS, Noethnitzer Strasse 38, Dresden

Agenda overview: June 11th and 12th

 

Thank you for the support by:

 

Oxford

3eFerro

High-k Workshop 2020 cancelled

Due to the current Corona virus situation Namlab decided to cancel the workshop.

A lot of speakers are not allowed to travel anymore or would need to be quarantined after coming back from Dresden. Workshop fees will be reimbursed through XING.

We will not postpone the workshop as it is not clear how long the current situation will last.

 

Conference proceedings would be still available:

 

Ferroelectric HfO2 results can be published in a Appl. Phys. Letter Special Topic collection.

Guest editors: T. Mikolajick, M.H. Park, U.Schroeder (details will follow)

Thank you for our understanding.

IMW 2020

The 12th International Memory Workshop (IMW) will be held in Dresden, Germany from May 17th-20th, 2020.

This conference brings the memory community together in a workshop environment to discuss the memory process and design technologies, applications, market needs and strategies. It is sponsored by the IEEE Electron Devices Society and meets annually in May. Prof. Thomas Mikolajick, scientific director of NaMLab, acts as the local chair for IMW this year.

The IMW is the premier international forum for both new and seasoned technologists having diverse technical backgrounds to share and learn about the latest developments in memory technology with the global community. The scope of workshop content ranges from new memory concepts in early research to the technology drivers currently in volume production as well as emerging technologies in development.

More information can be found on the IMW website: http://www.ewh.ieee.org/soc/eds/imw/index.htm

NaMLab at IEDM 2019

The following presentations by Namlab co-authors were excepted for the upcoming IEEE International Electron Devices Meeting (IEDM) 2019 in San Francisco on December 7-11.

 

 

Tutorial, December 7, 4:30 pm – 6:00 pm:

Ferroelectric Memories and Beyond, Johannes Műller, Globalfoundries and Thomas Mikolajick, NaMLab/TuDresden
DOWNLOAD ABSTRACT – Recent advances in scaling and CMOS-compatible implementation of ferroelectric thin films has sparked renewed interest to utilize the unique properties of these materials in advanced CMOS technology nodes. Led by the ferroelectric memory development and further fueled by new applications fields such as steep slope devices and neuromorphic applications, this field has seen a strong growth in R&D activity over the last decade. This tutorial will give an introduction to ferroelectric materials and devices with special emphasis on the utilization of hafnium oxide based thin films. The working principle as well as the challenges of capacitors based ferroelectric random access memory (FRAM), ferroelectric field effect transistor (FeFET) and ferroelectric tunnel junction (FTJ) will be reviewed. In addition, a brief outlook on beyond memory applications of CMOS-compatible ferroelectric thin films will be given.

 

Session 15 - Memory Technology - Ferroelectrics
Tuesday, December 10, 9:00 a.m.

9:05 AM 15.1 Material Perspectives of HfO2-based Ferroelectric Films for Device Applications
Akira Toriumi, Lun Xu, Yuki Mori, Xuan Tian, Patrick Lomenzo, Halid Mulaosmanovic, Monica
Materano, Thomas Mikolajick, Uwe Schroeder, The University of Tokyo, TU-Dresden
This paper gives material fundamentals and new insights to ferroelectric HfO2 for device applications. The
key role of dopants, effects of the interface on ferroelectric phase, and a detailed discussion of switching
kinetics are of central focus. Based on them, we discuss opportunities of ferroelectric HfO2 for device
applications.

11:10 AM 15.5 Next Generation Ferroelectric Memories Enabled by Hafnium Oxide (Invited)
Thomas Mikolajick, Uwe Schroeder, Patrick Lomenzo, Evelyn Breyer, Halid Mulaosmanovic, Michael
Hoffmann, Terence Mittmann, Furqan Mehmood, Benjamin Max, Stefan Slesazeck, NaMLab gGmbH,
Technische Universtität Dresden
Ferroelectrics are an ideal solution for low write power nonvolatile memories. The complexity of
ferroelectric perovskites has hindered the scaling. Ferroelectricity in hafnium oxide solved this issue
making ferroelectric memories in its three variants, ferroelectric RAM, ferroelectric field effect transistors
and ferroelectric tunneling junctions interesting for future memory solutions again.

12:00 PM 15.7 Demonstration of BEOL-Compatible Ferroelectric Scaled Hf0.5Zr0.5O2 FeRAM
Co-Integrated with 130nm CMOS for Embedded NVM Applications

Terry Francois, Laurent Grenouillet, Jean Coignus, Philippe Blaise, Catherine Carabasse, Nicolas
Vaxelaire, Thomas Magis, François Aussenac, Virginie Loup, Catherine Pellissier, Stefan Slesazeck,
Viktor Havel, Claudia Richter, Adam Makosiej, Bastien Giraud, Evelyn Breyer, Monica Materano, Philippe
Chiquet, Marc Bocquet, Etienne Nowak, Uwe Schroeder, Fred Gaillard, CEA-Leti, NaMLab gGmbH, Aix-
Marseille Université
We demonstrate scalability of HZO capacitors down to 300nm by co-integrating them for the first time in
Back-End-Of-Line of 130nm CMOS technology. Excellent performance are reported: 2.PR >40μC/cm²,
endurance >1011, switching speeds <100ns, operating voltages <4V, and data retention at 125°C paving the
way towards <10fJ/bit ultra-low power FeRAM for IoT applications.

 

Session 38 - Memory Technology - Memory for Neural Network

Wednesday, December 11, 1:30 p.m.

3:40 PM 38.6 A 2TnC Ferroelectric Memory Gain Cell Suitable for Compute-in-memory and Neuromorphic Application

Stefan Slesazeck, Taras Ravsher, Viktor Havel, Evelyn Breyer, Halid Mulaosmanovic, Thomas Mikolajick, NaMLab gGmbH, TU Dresden

A 2TnC ferroelectric memory gain cell is proposed, that can be operated either in FeRAM or FTJ mode. The internal gain of the cell mitigates the need for 3D integration of the FeCAPs, making the concept very attractive for embedded memories, compute-in-memory and neuromorphic applications.

NaMLab paper published in Nature

Researchers from NaMLab have verified a fundamental theory of ferroelectric materials which could lead to more energy-efficient electronics.

Scientists at NaMLab, in collaboration with researchers at Dresden University of Technology and the National Institute of Materials Physics, Romania, have demonstrated that thin layers of ferroelectric hafnium zirconium oxide can exhibit a phenomenon called “negative capacitance”. This means that such materials can amplify a voltage, which could be used to reduce the power dissipation of future electronics beyond conventional limits. While this peculiar behavior was already predicted over 70 years ago, until now, most scientists thought that it was impossible to show this experimentally. Since the materials used in this study can already be found in every advanced computer chip today, future products utilizing this new discovery, e.g. more efficient smartphones or computers, might not be far away.

While ferroelectric materials have been thoroughly investigated for almost a century, some fundamental questions have remained unresolved. One of them is related to the “Landau theory” of ferroelectrics from the 1940s, which is still used to describe the behavior of ferroelectric materials today. However, the theory also predicts a negative capacitance, which has been controversially discussed, especially in recent years. The theory suggests that an increase of electric charge can lead to a decrease of the voltage, which is exactly opposite to a regular capacitance. A scientist at NaMLab gGmbH has now first demonstrated a measurement of such a negative capacitance in exceptional agreement with Landau theory.

This discovery was enabled by using specially fabricated capacitors, consisting of a stack of ultrathin layers, to which extremely short voltage pulses were applied. The results have been published on January 14, 2019 in the prestigious journal Nature. “The fascinating thing is that the materials in which we discovered this promising effect are already used in every smartphone,” said Michael Hoffmann, Ph.D. student at NaMLab and lead author of the study. “However, the next important step will be to use these findings to develop new devices, which in theory could be much more energy-efficient than anything that is possible today.”

The scientific publication can be found online under:

http://dx.doi.org/10.1038/s41586-018-0854-z

New Publications from NaMLab

New research from NaMLab has been published in peer-reviewed scientific journals.

The following research papers by NaMLab (co-) authors have been accepted for publication or have been already published in various peer-reviewed scientific journals in the past months. If already available, the digital object identifier (DOI) and a link to the paper is given below:

Title Journal DOI
Local Structural Investigation of Hafnia-Zirconia Polymorphs in Powders and Thin Films by Extended X-ray Absorption Spectroscopy Acta Materialia

https://doi.org/10.1016/j.actamat.2019.09.003

Origin of the Large Remanent Polarization in La:HfO2 Advanced Electronic Materials Accepted for publication
Negative Capacitance for Electrostatic Supercapacitors Advanced Energy Materials https://doi.org/10.1002/aenm.201901154
Fluid imprint and inertial switching in ferroelectric La:HfO2 capacitors ACS Applied Materials & Interfaces https://doi.org/10.1021/acsami.9b11146
Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf0.5Zr0.5O2 Capacitors Advanced Materials Interfaces https://doi.org/10.1002/admi.201901180
Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance IEEE Transactions on Electron Devices 10.1109/TED.2019.2930749
Extraction of the active acceptor concentration in (pseudo-) vertical GaN MOSFETs using the body-bias effect Microelectronics Journal https://doi.org/10.1016/j.mejo.2019.07.011
Origin of ferroelectric phase in undoped HfO2 films deposited by sputtering Advanced Materials Interfaces https://doi.org/10.1002/admi.201900042

 

Positive Evaluation of NaMLab

NaMLab gGmbH has been positively evaluated by an international board of seven members from academia and industry.

End of October 2019 NaMLab gGmbH has been evaluated by an international board of seven members from academia and industry. The result was very encouraging for the team of NaMLab. The board acknowledged the outstanding technical and scientific results achieved closing the gap between science and industrial development and the efficient set-up of research and administration. It has been highlighted that NaMLab gGmbH is able to publish scientific results in renowned international journals like Nature and leading international industry conferences like the International Electron Device Meeting.

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Phone: +49.351.21.24.990-00
Fax: +49.351.475.83.900

info (at) namlab.com

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