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New publications on ferroelectrics in 2018

From January to May 2018, new publications on ferroelectric HfO2 and negative capacitance with contributions from NaMLab have been published in international peer-reviewed journals.

From the many new NaMLab papers on ferroelectrics published in the last months, the majority is focused on the properties and applications of ferroelectric HfO2. The article "Interplay between ferroelectric and resistive switching in doped crystalline HfO2" was featured on Journal of Applied Physics and was highlighted in AIP Scilight. Furthermore, the article "On the stabilization of ferroelectric negative capacitance in nanoscale devices" was featured in the 2018 Nanoscale HOT Article Collection. The full list of new publications can be found below:


Journal DOI

Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2

Advanced Materials Interfaces 10.1002/admi.201701258

Random Number Generation Based on Ferroelectric Switching

IEEE Electron Device Letters 10.1109/LED.2017.2771818

Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films

Nanoscale 10.1039/C7NR06342C

Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X‐Ray Diffraction

Advanced Electronic Materials 10.1002/aelm.201800091

Lanthanum-doped hafnium oxide: A robust ferroelectric material

Inorganic Chemistry 10.1021/acs.inorgchem.7b03149

Analysis of performance instabilities of Hafnia‐based ferroelectrics using modulus spectroscopy and thermally stimulated depolarization currents

Advanced Electronic Materials 10.1002/aelm.201700547

Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO2

Advanced Electronic Materials 10.1002/aelm.201700489

Pyroelectricity of silicon-doped hafnium oxide thin films

Applied Physics Letters 10.1063/1.5023390

Interplay between ferroelectric and resistive switching in doped crystalline HfO2

Journal of Applied Physics 10.1063/1.5015985

Built-in Bias Generation in Anti-ferroelectric Stacks: Methods and Device Applications

IEEE Journal of the Electron Devices Society 10.1109/JEDS.2018.2825360

Comparative Study of Reliability of Ferroelectric and Anti-Ferroelectric Memories

IEEE Transactions on Device and Materials Reliability 10.1109/TDMR.2018.2829112

Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study

Journal of Applied Physics 10.1063/1.5021746

On the relationship between field cycling and imprint in ferroelectric Hf0. 5Zr0. 5O2

Journal of Applied Physics 10.1063/1.5026424

Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors

Applied Physics Letters


Ferroelectric negative capacitance domain dynamics Journal of Applied Physics 10.1063/1.5030072

On the stabilization of ferroelectric negative capacitance in nanoscale devices

Nanoscale 10.1039/C8NR02752H


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