New publications on ferroelectrics in 2018
From the many new NaMLab papers on ferroelectrics published in the last months, the majority is focused on the properties and applications of ferroelectric HfO2. The article "Interplay between ferroelectric and resistive switching in doped crystalline HfO2" was featured on Journal of Applied Physics and was highlighted in AIP Scilight. Furthermore, the article "On the stabilization of ferroelectric negative capacitance in nanoscale devices" was featured in the 2018 Nanoscale HOT Article Collection. The full list of new publications can be found below:
|
Title |
Journal | DOI |
|
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2 |
Advanced Materials Interfaces | 10.1002/admi.201701258 |
|
Random Number Generation Based on Ferroelectric Switching |
IEEE Electron Device Letters | 10.1109/LED.2017.2771818 |
|
Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films |
Nanoscale | 10.1039/C7NR06342C |
|
Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X‐Ray Diffraction |
Advanced Electronic Materials | 10.1002/aelm.201800091 |
|
Lanthanum-doped hafnium oxide: A robust ferroelectric material |
Inorganic Chemistry | 10.1021/acs.inorgchem.7b03149 |
|
Analysis of performance instabilities of Hafnia‐based ferroelectrics using modulus spectroscopy and thermally stimulated depolarization currents |
Advanced Electronic Materials | 10.1002/aelm.201700547 |
|
Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO2 |
Advanced Electronic Materials | 10.1002/aelm.201700489 |
|
Pyroelectricity of silicon-doped hafnium oxide thin films |
Applied Physics Letters | 10.1063/1.5023390 |
|
Interplay between ferroelectric and resistive switching in doped crystalline HfO2 |
Journal of Applied Physics | 10.1063/1.5015985 |
|
Built-in Bias Generation in Anti-ferroelectric Stacks: Methods and Device Applications |
IEEE Journal of the Electron Devices Society | 10.1109/JEDS.2018.2825360 |
|
Comparative Study of Reliability of Ferroelectric and Anti-Ferroelectric Memories |
IEEE Transactions on Device and Materials Reliability | 10.1109/TDMR.2018.2829112 |
|
Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study |
Journal of Applied Physics | 10.1063/1.5021746 |
|
On the relationship between field cycling and imprint in ferroelectric Hf0. 5Zr0. 5O2 |
Journal of Applied Physics | 10.1063/1.5026424 |
|
Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors |
Applied Physics Letters | |
| Ferroelectric negative capacitance domain dynamics | Journal of Applied Physics | 10.1063/1.5030072 |
|
On the stabilization of ferroelectric negative capacitance in nanoscale devices |
Nanoscale | 10.1039/C8NR02752H |
