Sie sind hier: Startseite / Nature Electronics Paper

Nature Electronics Paper

Researchers at NaMLab have published a paper in the prestigious journal Nature Electronics.
Hinweis
Dieser Text ist nur in Englisch verfügbar.

Ferroelectric field-effect transistors based on HfO2 have attracted significant attention in recent years. Prospective applications range from non-volatile memories to neuromorphic computing.

Now, researchers at NaMLab have shown that such ferroelectric transistors can also be used as frequency multipliers, which was recently published in Nature Electronics.

In these experiments, the transistors could be tuned to exhibit symmetric current-voltage characteristics by adjusting the ferroelectric polarization in the HfO2 layer and band-to-band tunneling currents in the device. For the symmetric device behavior, a voltage signal with a certain frequency can be easily converted into a current with double the original frequency using a single transistor. This effect could be utilized in compact and energy-efficient wireless communication systems.

Link to the paper: https://doi.org/10.1038/s41928-020-0413-0

Nature Research Device & Materials Engineering blog post: Link

TechXplore article: https://techxplore.com/news/2020-06-reconfigurable-ferroelectric-field-effect-transistor-frequency.html

abgelegt unter:
Kontakt

NaMLab gGmbH
Nöthnitzer Str. 64 a
01187 Dresden
Deuschland

Tel. +49.351.21.24.990-00
Fax. +49.351.475.83.900

info(at)namlab.com

Anfahrt

 

Wappen des Freistaates Sachsen


Diese Maßnahme wird mitfinanziert durch Steuermittel auf der Grundlage des vom Sächsischen Landtag beschlossenen Haushaltes.

More information

NaMLab – a TU Dresden company

Logo TU Dresden

 

Member/Partner of