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Updates to the 3eFERRO and BeFerroSynaptic projects funded by the European Union’s Horizon 2020 research and innovation programme.

3eFERRO is a project for competitive, scalable FeRAM and logic-in-memory designs based on Si-compatible ferroelectric HfxZr1-xO2. The latest results on the materials optimization, logic design and integration into a 16 kbit test vehicle are highly encouraging. The newsletter can be found here.

The goal of the BeFerroSynaptic project is to develop a technology platform based on back-end-of-line (BEOL) integrated ferroelectric HfO2-based synaptic devices to tackle the challenges of next generation electronic devices. The attempt is to demonstrate the feasibility of its adoption in an extremely energy-efficient neuromorphic computing architecture that goes far beyond the conventional CMOS paradigm. The newsletter can be found here.

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